MPN: SI9410BDY

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.2A; Fall Time tf:11ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:15nC; No. of Transistors:1; On State Resistance @ Vgs = 4.5V:33mohm; On State resistance @ Vgs = 10V:24mohm; Package / Case:SOIC; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:30A; Rise Time:15ns; Termination Type:SMD; Turn Off Time:30ns; Turn On Time:10ns; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:4.5V